中国 FeはGaNの基質の抵抗を> 10 ⁶ Ω添加した·Cm RF装置 販売のため
FeはGaNの基質の抵抗を> 10 ⁶ Ω添加した·Cm RF装置
価格: Negotiable
MOQ: Negotiable
納期: 3-4 week days
ブランド: GaNova
ハイライト:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... もっと見る
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中国 2インチ パワーデバイス 高電子移動性トランジスタ エピタキシアル・ウェーファー 販売のため
2インチ パワーデバイス 高電子移動性トランジスタ エピタキシアル・ウェーファー
価格: Negotiable
MOQ: 5
納期: Negotiable
ブランド: Ganova
ハイライト:sic epitaxial wafer 2 Inch, Power Device sic epitaxial wafer, High Electron Mobility Transistor Epitaxial Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... もっと見る
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中国 18mm GaAs Si Wafer 2inch GaAs Undoped Substrates VGF S-C-N 販売のため
18mm GaAs Si Wafer 2inch GaAs Undoped Substrates VGF S-C-N
価格: Negotiable
MOQ: Negotiable
納期: 3-4 week days
ブランド: GaNova
ハイライト:18mm GaAs Si Wafer, GaAs Undoped Substrates VGF, GaAs Si Wafer 2inch
2inch GaAs (100) Undoped Substrates Overview GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. Gallium arsenide (chemical formula GaAs) is a semiconductor compound used in some d... もっと見る
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中国 JDCD05-001-004 3*3mm2*0.5mm 電子グレード単結晶ダイヤモンド、N含有量 販売のため
JDCD05-001-004 3*3mm2*0.5mm 電子グレード単結晶ダイヤモンド、N含有量
価格: Negotiable
MOQ: Negotiable
納期: 3-4 week days
ブランド: GaNova
JDCD05-001-004 3*3mm2*0.5mm electronic grade single crystal diamond,N content もっと見る
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中国 RTP-SA-8 焼却システム 販売のため
RTP-SA-8 焼却システム
価格: Negotiable
MOQ: Negotiable
納期: 3 month
ブランド: Ganova
ハイライト:Boost Production Rapid Thermal Processing, Rapid Thermal Processing Annealing System
1.Basic configuration of equipment system 1.1outline The Rapid Thermal Processing is a vertical semi-automatic 8-inch wafer rapid annealing furnace, which uses two layers of infrared halogen lamps as heat sources for heating. The internal quartz cavity is insulated and insulated, and the outer shell... もっと見る
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中国 Hall Coefficient Hall Effect Sensor Tester Mobility Resistivity Measurement 販売のため
Hall Coefficient Hall Effect Sensor Tester Mobility Resistivity Measurement
価格: Negotiable
MOQ: 1
納期: 8-10week days
ブランド: GaNova
ハイライト:Hall Effect Sensor Tester Mobility Resistivity, carrier concentration hall effect instrument, Hall Effect Sensor Tester semiconductor
Hall Coefficient Hall Effect Sensor Tester mobility resistivity measurement Product Overview: Hall effect tester is used to measure the carrier concentration, mobility, resistivity, Hall coefficient and other important parameters, and these parameters of semiconductor materials to understand the ele... もっと見る
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中国 ALN 10*10mm2 AlN シングルクリスタル 400±50μM S/P/Rグレード 販売のため
ALN 10*10mm2 AlN シングルクリスタル 400±50μM S/P/Rグレード
価格: Negotiable
MOQ: 1
納期: Negotiable
ブランド: GaNova
ハイライト:ALN aluminum nitride wafer, 2H aluminum nitride wafer, 10*10mm2 aln wafer
AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of AlN substrate is quite smooth and low porosity . Aluminium Nitride has higher thermal conductivity , compared to al... もっと見る
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中国 94um Laser Diode Chip Slope Efficiency 1.0W/A Wavelength 915nm 販売のため
94um Laser Diode Chip Slope Efficiency 1.0W/A Wavelength 915nm
価格: Negotiable
MOQ: Negotiable
納期: Negotiable
ブランド: GaNova
ハイライト:94um Laser Diode Chip, high power laser diode chip, 1.0W/A Laser Diode Chip
94μm Laser Diode Chip Slope Efficiency 1.0W/A Wavelength 915nm 915nm 10W COS Diode Laser Chip On Submount Design For low power consumption it is essential that the output from the laser diode (LD) is efficiently coupled to the optical waveguide, and there are several approaches reported in the liter... もっと見る
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中国 100.0mm Silicon Carbide Crystal 4
100.0mm Silicon Carbide Crystal 4" P Grade Politype 4H
価格: Negotiable
MOQ: Negotiable
納期: 3-4 week days
ハイライト:Silicon Carbide Crystal P Grade, single crystal silicon carbide, Silicon Carbide Crystal 4H
100.0mm±0.5mm SiC Seed Crystal 4" P Grade 4.0°±0.2° Politype 4H SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing avalanche breakdown. This high breakdown electric field enables the fabricati... もっと見る
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中国 SnドーピングGa2O3ウェーハ単結晶基板10x10mm2 販売のため
SnドーピングGa2O3ウェーハ単結晶基板10x10mm2
価格: Negotiable
MOQ: Negotiable
納期: 3-4 week days
ブランド: GaNova
ハイライト:Sn Doping Ga2O3 Wafer, 0.8mm Gallium Oxide wafer, Ga2O3 Wafer 10x10mm2
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM<350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Among these different phases of Ga2O3, the orthorhombic β-gallia stru... もっと見る
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中国 JDCD07-001-001 MEMS プロセス用 4 インチ SOI エピタキシャルウェーハ 販売のため
JDCD07-001-001 MEMS プロセス用 4 インチ SOI エピタキシャルウェーハ
価格: Negotiable
MOQ: 1
納期: 3-4 week days
ブランド: GaNova
4-Inch SOI Epitaxial Wafer For MEMS Processing Overview Although silicon crystals may look metallic, they are not entirely metals. Due to the "free electrons" that move easily between atoms, metals are good conductors of electricity, and electricity is the movement of electrons. A pure sil... もっと見る
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中国 JDCD08-001-006 6inchのC平面のサファイアの基質のウエファー 販売のため
JDCD08-001-006 6inchのC平面のサファイアの基質のウエファー
価格: Negotiable
MOQ: Negotiable
納期: Negotiable
JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer Sapphires are Second Only to Diamonds in Durability Diamond is the most durable naturally occurring element on earth and ranks as a 10 out of 10 on Mohs Scale of Mineral Hardness. Sapphires are also very durable and rank as a 9 out of 10 on Mohs ... もっと見る
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中国 UKAS Patterned Sapphire Substrates Flat Edge Angle 販売のため
UKAS Patterned Sapphire Substrates Flat Edge Angle
価格: Negotiable
MOQ: 1
納期: Negotiable
ブランド: GaNova
ハイライト:UKAS Patterned Sapphire Substrates, al2o3 substrate 430um, Patterned Sapphire Substrates OEM
50.80±0.10mm Patterned Sapphire Substrates Flat Edge Angle A-Plane±0.2o 2inch Patterned Sapphire Substrates,LED Chip,Substrate Material The efficacy enhancement of GaN-based LEDs with the patterned-sapphire substrate technique is generally attributed to the improvement in both light extraction effic... もっと見る
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中国 花のバスケットおよびハンドルをきれいにする6inchテフロン ウエハー ホールダー 販売のため
花のバスケットおよびハンドルをきれいにする6inchテフロン ウエハー ホールダー
価格: Negotiable
MOQ: 1
納期: Negotiable
ハイライト:6inch Wafer Holder, wafer cassette carrier, 25 PCS Wafer Holder
6inch Wafer Holder Cleaning Flower Baskets And Handles PFA Cassette / Cassette of wafer can be customized and designed by customers’ request, able to resist strong acid, strong hydrofluoric acid, strong base and heat up to 200~220℃, use to deliver wafers in acid & base process of Fabrication f... もっと見る
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中国 0.1mm/s To 600mm/s Wafer Dicing Machine X Axis Cutting Range 260mm 販売のため
0.1mm/s To 600mm/s Wafer Dicing Machine X Axis Cutting Range 260mm
価格: Negotiable
MOQ: 1
納期: 8-10week days
ブランド: GaNova
ハイライト:0.1mm/s Wafer Dicing Machine, wafer saw machine 260mm, 600mm/s Wafer Dicing Machine
DAD3350 Wafer Dicing Machine 0.1 ~ 600mm/s X-Axis Cutting Range 260mm Improved throughput The DAD3350 achieves improvement in throughput by increasing the speed of each axis. Ease of use Operability is improved with installation of an LCD touch screen and Graphical User Interface (GUI). Easy operati... もっと見る
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