GaNのエピタキシアル ウエファー

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FeはGaNの基質の抵抗を> 10 ⁶ Ω添加した·Cm RF装置

価格: Negotiable

MOQ: Negotiable

納期: 3-4 week days

ブランド: GaNova

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ハイライト:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... もっと見る

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Sicのエピタキシアル ウエファー

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150.0mm +0mm/-0.2mm SiCのエピタキシアル ウエファー二次平たい箱無し3mm

価格: Negotiable

MOQ: Negotiable

納期: 3-4 week days

ブランド: GaNova

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ハイライト:150.0 mm SiC Epitaxial Wafer, silicon carbide wafer 3mm, SiC Epitaxial Wafer No Secondary Flat

JDCD03-001-003 Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A thin SiC epitaxial layer is then grown on top of this substrate to create an epi-wafer. Today, the semiconductor industry is expanding at a rapid rate, w... もっと見る

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GaAsエピウェーハ

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18mm GaAs Si Wafer 2inch GaAs Undoped Substrates VGF S-C-N

価格: Negotiable

MOQ: Negotiable

納期: 3-4 week days

ブランド: GaNova

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ハイライト:18mm GaAs Si Wafer, GaAs Undoped Substrates VGF, GaAs Si Wafer 2inch

2inch GaAs (100) Undoped Substrates Overview GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. Gallium arsenide (chemical formula GaAs) is a semiconductor compound used in some d... もっと見る

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CVDダイヤモンド基板

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JDCD05-001-004 3*3mm2*0.5mm 電子グレード単結晶ダイヤモンド、N含有量

価格: Negotiable

MOQ: Negotiable

納期: 3-4 week days

ブランド: GaNova

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JDCD05-001-004 3*3mm2*0.5mm electronic grade single crystal diamond,N content もっと見る

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急速な熱焼きなましシステム

(2)

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RTP-SA-8 の高速熱処理で生産性を向上させる

価格: Negotiable

MOQ: Negotiable

納期: 3 month

ブランド: Ganova

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1.Basic configuration of equipment system 1.1outline The Rapid Thermal Processing is a vertical semi-automatic 8-inch wafer rapid annealing furnace, which uses two layers of infrared halogen lamps as heat sources for heating. The internal quartz cavity is insulated and insulated, and the outer shell... もっと見る

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ホール効果センサーテスター

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Hall Coefficient Hall Effect Sensor Tester Mobility Resistivity Measurement

価格: Negotiable

MOQ: 1

納期: 8-10week days

ブランド: GaNova

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ハイライト:Hall Effect Sensor Tester Mobility Resistivity, carrier concentration hall effect instrument, Hall Effect Sensor Tester semiconductor

Hall Coefficient Hall Effect Sensor Tester mobility resistivity measurement Product Overview: Hall effect tester is used to measure the carrier concentration, mobility, resistivity, Hall coefficient and other important parameters, and these parameters of semiconductor materials to understand the ele... もっと見る

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窒化アルミニウムのウエファー

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半絶縁のAINサファイアのウエファーのサファイアのシングルまたはダブルの側面は磨いた

価格: Negotiable

MOQ: Negotiable

納期: Negotiable

ブランド: GaNova

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ハイライト:AIN Sapphire Wafer, Semi Insulating AIN Wafer, Sapphire Wafer Single Side Polished

2 Inch Thick Film (1,2)μm AIN On Sapphire Wafer SSP XRD FWHM Of(002)≤80arcsec(102) ≤650arcsec UV Disinfection LED Chip The material is a good electrical insulator with excellent thermal conductivity. Its high insulating properties make it an excellent choice for a variety of applications. A wide var... もっと見る

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半導体レーザーの破片

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94um Laser Diode Chip Slope Efficiency 1.0W/A Wavelength 915nm

価格: Negotiable

MOQ: Negotiable

納期: Negotiable

ブランド: GaNova

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ハイライト:94um Laser Diode Chip, high power laser diode chip, 1.0W/A Laser Diode Chip

94μm Laser Diode Chip Slope Efficiency 1.0W/A Wavelength 915nm 915nm 10W COS Diode Laser Chip On Submount Design For low power consumption it is essential that the output from the laser diode (LD) is efficiently coupled to the optical waveguide, and there are several approaches reported in the liter... もっと見る

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炭化ケイ素の水晶

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100.0mm Silicon Carbide Crystal 4" P Grade Politype 4H

価格: Negotiable

MOQ: Negotiable

納期: 3-4 week days

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ハイライト:Silicon Carbide Crystal P Grade, single crystal silicon carbide, Silicon Carbide Crystal 4H

100.0mm±0.5mm SiC Seed Crystal 4" P Grade 4.0°±0.2° Politype 4H SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing avalanche breakdown. This high breakdown electric field enables the fabricati... もっと見る

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Ga2O3 ウエハー

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SnドーピングGa2O3ウェーハ単結晶基板10x10mm2

価格: Negotiable

MOQ: Negotiable

納期: 3-4 week days

ブランド: GaNova

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ハイライト:Sn Doping Ga2O3 Wafer, 0.8mm Gallium Oxide wafer, Ga2O3 Wafer 10x10mm2

10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Among these different phases of Ga2O3, the orthorhombic β-gallia stru... もっと見る

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シリコンの薄片

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JDCD07-001-001 MEMS プロセス用 4 インチ SOI エピタキシャルウェーハ

価格: Negotiable

MOQ: 1

納期: 3-4 week days

ブランド: GaNova

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4-Inch SOI Epitaxial Wafer For MEMS Processing Overview Although silicon crystals may look metallic, they are not entirely metals. Due to the "free electrons" that move easily between atoms, metals are good conductors of electricity, and electricity is the movement of electrons. A pure sil... もっと見る

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サファイアのウエファー

(19)

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JDCD08-001-006 6inchのC平面のサファイアの基質のウエファー

価格: Negotiable

MOQ: Negotiable

納期: Negotiable

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JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer Sapphires are Second Only to Diamonds in Durability Diamond is the most durable naturally occurring element on earth and ranks as a 10 out of 10 on Mohs Scale of Mineral Hardness. Sapphires are also very durable and rank as a 9 out of 10 on Mohs ... もっと見る

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模造されたサファイアの基質

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UKAS Patterned Sapphire Substrates Flat Edge Angle

価格: Negotiable

MOQ: 1

納期: Negotiable

ブランド: GaNova

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ハイライト:UKAS Patterned Sapphire Substrates, al2o3 substrate 430um, Patterned Sapphire Substrates OEM

50.80±0.10mm Patterned Sapphire Substrates Flat Edge Angle A-Plane±0.2o 2inch Patterned Sapphire Substrates,LED Chip,Substrate Material The efficacy enhancement of GaN-based LEDs with the patterned-sapphire substrate technique is generally attributed to the improvement in both light extraction effic... もっと見る

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テフロン ウエファーのホールダー

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花のバスケットおよびハンドルをきれいにする6inchテフロン ウエハー ホールダー

価格: Negotiable

MOQ: 1

納期: Negotiable

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ハイライト:6inch Wafer Holder, wafer cassette carrier, 25 PCS Wafer Holder

6inch Wafer Holder Cleaning Flower Baskets And Handles PFA Cassette / Cassette of wafer can be customized and designed by customers’ request, able to resist strong acid, strong hydrofluoric acid, strong base and heat up to 200~220℃, use to deliver wafers in acid & base process of Fabrication f... もっと見る

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ウェーハダイシングマシン

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0.1mm/s To 600mm/s Wafer Dicing Machine X Axis Cutting Range 260mm

価格: Negotiable

MOQ: 1

納期: 8-10week days

ブランド: GaNova

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ハイライト:0.1mm/s Wafer Dicing Machine, wafer saw machine 260mm, 600mm/s Wafer Dicing Machine

DAD3350 Wafer Dicing Machine 0.1 ～ 600mm/s X-Axis Cutting Range 260mm Improved throughput The DAD3350 achieves improvement in throughput by increasing the speed of each axis. Ease of use Operability is improved with installation of an LCD touch screen and Graphical User Interface (GUI). Easy operati... もっと見る

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