Ga2O3 ウエハー
(13)
SnドーピングGa2O3ウェーハ単結晶基板10x10mm2
価格: Negotiable
MOQ: Negotiable
納期: 3-4 week days
ブランド: GaNova
ハイライト:Sn Doping Ga2O3 Wafer, 0.8mm Gallium Oxide wafer, Ga2O3 Wafer 10x10mm2
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Among these different phases of Ga2O3, the orthorhombic β-gallia stru... もっと見る
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単一の側面の磨かれたGa2O3ウエファーの単結晶の基質
価格: Negotiable
MOQ: Negotiable
納期: 3-4 week days
ブランド: GaNova
ハイライト:Side Polished Ga2O3 Wafer, 0.6mm gallium nitride substrate, Ga2O3 Wafer UKAS
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Gallium Oxide (Ga2O3) is emerging as a viable candidate for certain c... もっと見る
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0.6mm 0.8mmのGa2O3単結晶の基質の単一のポーランド語
価格: Negotiable
MOQ: Negotiable
納期: 3-4 week days
ブランド: GaNova
ハイライト:Ga2O3 Single Crystal Substrate, Gallium Oxide wafer 0.6mm, 0.8mm Single Crystal Substrate
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Gallium Nitride (GaN) substrate is a high-quality single-crystal subs... もっと見る
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JDCD04-001-007 10x10mm2(010)Sn ドープ自立型 Ga2O3 単結晶基板 製品グレード シングル研磨
価格: Negotiable
MOQ: Negotiable
納期: 3-4 week days
ブランド: GaNova
10x10mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 1.53E+18Ω/cm-3 Optoelectronic devices, insulating layers of semiconductor materials, and UV filters While silicon-based devices have been able to p... もっと見る
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Ra 0.3nm Ga2O3 単結晶エピタキシャルウェーハ 2インチ 4インチ
価格: Negotiable
MOQ: Negotiable
納期: 3-4 week days
ブランド: GaNova
ハイライト:Ga2O3 epitaxial wafer 2 Inch, Single Crystal Substrate 4 Inch, single crystal epitaxial wafer
Ra≤0.3nm Single Crystal Substrate Thickness 0.6~0.8mm Orientation (-201) 10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filt... もっと見る
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片面研磨 Ga2O3 基板 単結晶 厚さ 0.6mm 0.8mm
価格: Negotiable
MOQ: Negotiable
納期: 3-4 week days
ブランド: GaNova
ハイライト:side polished Ga2O3 Substrate, 0.8mm Gallium Oxide substrate, Ga2O3 Substrate Single Crystal
Single side polished Ga2O3 Single Crystal Substrate Thickness 0.6~0.8mm 10x15mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 2.00E+17Ω/cm-3 Optoelectronic devices, insulating layers of semiconductor m... もっと見る
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FWHM<350arcsec Ga2O3 Wafer Single Crystal Substrate Thickness 0.6mm To 0.8mm
価格: Negotiable
MOQ: Negotiable
納期: 3-4 week days
ブランド: GaNova
ハイライト:Ga2O3 Wafer 0.6mm, single crystal substrate 0.8mm, Ga2O3 Wafer 0.8mm
FWHM もっと見る
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Ga2O3 Fe によってドープされるウエファーの単結晶の基質 10x10mm2 の自由な地位
価格: Negotiable
MOQ: Negotiable
納期: 3-4 week days
ブランド: GaNova
ハイライト:Ga2O3 Fe Doped Wafer, Single crystal Ga2O3 substrate, Fe Doped Wafer 10x10mm2
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Ga2O3 has a long history and the phase equilibria of the Al2O3-Ga2O3-... もっと見る
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Semiconductor Single Crystal Gallium Oxide Substrate UID Doping
価格: Negotiable
MOQ: Negotiable
納期: 3-4 week days
ブランド: GaNova
ハイライト:Single Crystal Gallium Oxide substrate, semiconductor wafer ISO, Gallium Oxide substrate UID Doping
Ga2O3 Single Crystal Substrate Thickness 0.6~0.8mm FWHM もっと見る
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JDCD04-001-002 10x10mm2 (-201) Sn-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing
価格: Negotiable
MOQ: Negotiable
納期: 3-4 week days
ブランド: GaNova
10x10mm2 (-201) Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Resistance もっと見る
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JDCD04-001-003 10x10mm2 100(オフ 6°) Fe ドープ自立型 Ga2O3 単結晶基板 製品グレード シングル研磨
価格: Negotiable
MOQ: Negotiable
納期: 3-4 week days
ブランド: GaNova
10x10mm2 100(off 6°) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤5nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Power density is greatly improved in gallium nitride devices compar... もっと見る
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10x15mm2 UID ドープ フリースタンディング Ga2O3 ウェーハ シングル 研磨
価格: Negotiable
MOQ: Negotiable
納期: 3-4 week days
ブランド: GaNova
ハイライト:10x15mm2 Ga2O3 Wafer, UID Doped Ga2O3 Substrate, Ga2O3 Wafer Single Polishing
JDCD04-001-005 10x15mm2(-201)UID-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing 10x15mm2(-201)UID-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 4.13E+17Ω/cm-3 Optoelectronic ... もっと見る
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10x10mmのGa2O3ウエファー10x15mmの単結晶の基質
価格: Negotiable
MOQ: Negotiable
納期: 3-4 week days
ブランド: GaNova
ハイライト:10x10mm Ga2O3 Wafer, 10x15mm single crystal wafer, Ga2O3 Wafer 10x15mm
10x15mm2(-201)UID-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 4.13E+17Ω/cm-3 Optoelectronic devices, insulating layers of semiconductor materials, and UV filters With increased energy efficiency, smaller req... もっと見る
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