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ディスクリート半導体
(21)
PBHV8540X PBHV8540 Nexperia両極BJTのトランジスター分離した半導体
価格: Negotiated
MOQ: 10
納期: 2-15days
ブランド: Nexperia USA Inc.
ハイライト:PBHV8540X, PBHV8540, Nexperia Bipolar BJT Transistor
PBHV8540X PBHV8540 Nexperia Bipolar (BJT) Transistor 500V 0.5 A NPN A NPN high-voltage low VCEsat (BISS) transistor Discrete Semiconductor Products-A NPN high-voltage low VCEsat (BISS) transistor Description: NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-6... もっと見る
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BTS282Z E3230 TO220-7のN-Channel MOSFET 49V 80AのトランジスターFETs
価格: Negotiated
MOQ: 10pieces
納期: 2-15days
ブランド: Infineon Technologies/International Rectifier IOR
ハイライト:49V 80A Transistors FETs, N-Channel MOSFET Transistors FETs
BTS282Z E3230 TO220-7 N-Channel MOSFET 49V 80A Transistors FETs BTS282ZE3230AKSA2 power MOSFET from Infineon Technologies. Its maximum power dissipation is 300000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by st... もっと見る
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IRF1404ZPBFNチャネルトランジスタ180A200W HEXFET FET MOSFET
価格: Negotiated
MOQ: 10pieces
納期: 2-15days
ブランド: Infineon Technologies/International Rectifier IOR
ハイライト:IRF1404ZPBF N Channel Transistor, 180A 200W HEXFET FET MOSFET, N Channel Transistor 180A 200W
IRF1404ZPBF Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs N-Channel 180A (Tc) 200W (Tc) Through Hole TO-220AB Specification: Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Ch... もっと見る
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BTA16-800CWBTA16トライアックサイリスタ800V16Aディスクリート半導体
価格: Negotiated
MOQ: 10pieces
納期: 2-15days
ブランド: STMicroelectronics
ハイライト:800V 16A Discrete Semiconductors, BTA16 TRIAC Thyristor, BTA16-800CW BTA16
BTA16-800CW TRIAC Standard 800 V 16 A Through Hole TO-220 Discrete Semiconductor Products Thyristors --TRIAC Standard 800 V 16 A Through Hole TO-220 T1610, T1635, T1650 BTA16, BTB16 Snubberless™, logic level and standard 16 A Triacs Datasheet Applications• Snubberless versions (BTA/BTB...W and T1635... もっと見る
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D15XB100電磁調理器ブリッジ整流器15A1000V SIP4
価格: Negotiated
MOQ: 10
納期: 2-15days
ブランド: SHINDENGEN
ハイライト:D15XB100 Induction Cooker Bridge Rectifier, Induction Cooker Bridge Rectifier 15A 1000V, SIP4 bridge rectifier for induction cooker
D15X100 D15XB100 SHINDENGEN Bridge Rectifiers 15A 1000V SIP4 for induction cooker Product Technical Specifications Part number D15X100 Base part number D15XB100 EU RoHS Compliant with Exemption ECCN (US) EAR99 Part Status Active HTS 8541.29.00.95 SVHC Yes SVHC Exceeds Threshold Yes Automotive No PPA... もっと見る
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06N90E FMV06N90EFMH06N90Eディスクリート半導体900V6A
価格: Negotiated
MOQ: 10
納期: 2-15days
ブランド: FUJI
ハイライト:FMH06N90E Discrete Semiconductors, FMV06N90E Discrete Semiconductors, 06N90E FMV06N90E
06N90E FMV06N90E FMH06N90E Mosfet 900V 6A TO 220F Electronic components 06N90E FMV06N90E FMH06N90E Mosfet 900V 6A TO 220F Product Technical Specifications Part number FMV06N90E FMH06N90E Base part number 06N90E EU RoHS Compliant with Exemption ECCN (US) EAR99 Part Status Active HTS 8541.29.00.95 SVH... もっと見る
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インフィニオンHEXFETパワーMOSFETNチャネル55V30A DPAK IRLR3915TRPBF
価格: Negotiated
MOQ: 10
納期: 2-15days
ブランド: Infineon Technologies/International Rectifier IOR
ハイライト:Infineon HEXFET Power MOSFET, MOSFET N Channel 55V 30A, 55V 30A HEXFET Power MOSFET
IRLR3915TRPBF Infineon Technologies/International Rectifier IOR HEXFET MOSFET N-Channel 55V 30A DPAK Discrete Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resis... もっと見る
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IRF1404 IRF1404PBFNチャネルパワーMOSFET40Vディスクリート半導体
価格: Negotiated
MOQ: 10
納期: 2-15days
ブランド: INFINEON
ハイライト:IRF1404PBF N Channel Power MOSFET, IRF1404 N Channel Power MOSFET, MOSFET 40V Discrete Semiconductors
IRF1404 IRF1404PBF IRF1404Z IRF1404ZPBF 40V Single N-Channel Power MOSFET in a TO-220 package About IRF1404PBF: Summary of Features IRF1404 40V Single N-Channel Power MOSFET in a TO-220 package Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product ... もっと見る
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GT50N322A 50N322 IGBTNチャネルディスクリート半導体スルーホール実装
価格: Negotiated
MOQ: 10
納期: 2-15days
ブランド: Toshiba America Electronic Components
ハイライト:50N322 IGBT N Channel, GT50N322A IGBT N Channel, IGBT N Channel Discrete Semiconductors
GT50N322A 50N322 Toshiba America Electronic Components IGBT N-Channel 1000V 3-Pin TO-3P(N) DISCRETE IGBT Components Product Technical Specifications Part number GT50N322A Base part number 50N322 EU RoHS Compliant with Exemption ECCN (US) EAR99 Part Status Active HTS 8541.29.00.95 SVHC Yes SVHC Excee... もっと見る
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TIP122 TIP127 TIP142P NPNPNPトランジスタバイポーラディスクリート半導体
価格: Negotiated
MOQ: 10pieces
納期: 2-15days
ブランド: STMicroelectronics
ハイライト:TIP142P NPN PNP Transistor, TIP122 TIP127 NPN PNP Transistor, Bipolar Discrete Semiconductors
TIP35C TIP41C TIP42C TIP122 TIP127 TIP142P Complementary NPN - PNP transistors Bipolar Discrete Semiconductor Products Complementary power transistors Description: The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain perfor... もっと見る
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IRFB4310PBF 100V 130A FETHEXFETパワーMOSFETIRFB7440PBF 40V 120A
価格: Negotiated
MOQ: 10pieces
納期: 2-15days
ブランド: Infineon Technologies/International Rectifier IOR
ハイライト:100V 130A FET HEXFET Power Mosfet, IRFB4310PBF, IRFB7440PBF
IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A Transistors TO-220AB HEXFET FETs MOSFETs Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs ---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A Description: This HEXFET® Power MOSFET utilizes the... もっと見る
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IHW30N160R2IGBTトランジスタH30R1602パワー半導体
価格: Negotiated
MOQ: 10pieces
納期: 2-15days
ブランド: Infineon Technologies/International Rectifier IOR
ハイライト:IHW30N160R2 IGBT Transistor, H30R1602 Power Semiconductor, IHW30N160R2
IHW30N160R2 IGBTs Transistors H30R1602 Soft Switching Series Power Semiconductors IC IHW30N160R2FKSA1 Soft Switching Series Applications: • Inductive Cooking • Soft Switching Applications Description: TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic... もっと見る
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IXYSIXGH24高電圧IGBTディスクリート半導体IXGH24N170
価格: Negotiated
MOQ: 10pieces
納期: 2-15days
ブランド: IXYS
ハイライト:IXGH24 High Voltage IGBT, IXYS High Voltage IGBT, IGBT Discrete Semiconductors
IXGH24N170 IXYS High Voltage IGBT IXGH24 IGBT 1700V 50A 250W TO247AD Discrete Semiconductor Products Specification:High Voltage IGBT NPT 1700 V 50 A 250 W Through Hole TO-247AD Part number IXGH24N170 Category Discrete Semiconductor Products Transistors - IGBTs - Single Mfr IXYS Series - Package Tu... もっと見る
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KBL410KBL610シリコンブリッジ整流器KBPC610ディスクリート半導体製品
価格: Negotiated
MOQ: 10pieces
納期: 2-15days
ブランド: MDD
ハイライト:KBL610 Silicon Bridge Rectifier, KBL410 Silicon Bridge Rectifier, KBPC610 Discrete Semiconductor Products
KBL410 KBL610 KBU610 KBU810 KBU1010 KBU1510 KBU2510 KBPC610 KBL Series Silicon Bridge Rectifier Diodes-Bridge Rectifiers -Discrete Semiconductor Products Transistors Description: Through Hole Silicon Bridge Rectifier, KBL Series, KBL410 Type, 4 Pins, Reverse Voltage 1000V Max. Forward Current 4 A Ma... もっと見る
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V20PWM45 Vishay SemiconductorTMBSトレンチMOSバリアショットキー整流器
価格: Negotiated
MOQ: 10
納期: 2-15days
ブランド: Vishay General Semiconductor
ハイライト:V20PWM45 Vishay Semiconductor, Vishay Semiconductor TMBS Trench, MOS Barrier Schottky Rectifier
V20PWM45 V20PWM45C-M3/I Vishay Semiconductor High Current Density TMBS Trench MOS Barrier Schottky Rectifier DPAK Discrete Semiconductor Products V20PWM45 :High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.35 V at IF = 5 AV20PWM45C High Current Density... もっと見る
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Nチャネルのトランジスター分離した半導体SIHF10N40D-E3力のMosfets
価格: Negotiated
MOQ: 10
納期: 2-15days
ブランド: Vishay Semiconductor
ハイライト:SIHF10N40D-E3 Power Mosfets, N Channel Transistor, Discrete Semiconductors SIHF10N40D-E3
SIHF10N40D-E3 power mosfets N channel transistor operates in enhancement mode Vishay's SIHF10N40D-E3 maximum power dissipation is 33000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. If ... もっと見る
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PM080P150CG Powercube Semi middle voltage mosfet
価格: Negotiated
MOQ: 10pcs
納期: Negotiable
Quote Powercube electronics parts online at icschip.com. Angel Technology Electronics is a leading distributor of Powercube Semi. PM080P150CG Powercube Semi middle voltage mosfet For health care,wireless charger Applications: health care, wireless charger PSF70060B is PowerCubeSemi’s second generati... もっと見る
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I2Cバス管理されたアンプIC TDF8546 DF8546JV/N2Z TDF8546J/N2 TDF8546JS
価格: Negotiated
MOQ: 10
納期: 2-15days
ブランド: Philip
ハイライト:DF8546JV/N2Z Amplifier IC, TDF8546J Amplifier IC, Bus Controlled Amplifier IC
TDF8546 DF8546JV/N2Z TDF8546J/N2 TDF8546JS I2C bus controlled best efficiency amplifier IC Summary of Features The TDF8546 is one of a new generation of complementary quad Bridge-Tied Load (BTL) audio power amplifiers intended for automotive applications. It has a best efficiency mode with full I2C-... もっと見る
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インフィニオン・テクノロジーズ著IKW75N60TXK IKW75N60 K75T60分離したIGBT
価格: Negotiated
MOQ: 10
納期: 2-15days
ブランド: Infineon Technologies
ハイライト:K75T60 Infineon Discrete Igbt, IKW75N60TXK Infineon Discrete Igbt
IKW75N60TXK IKW75N60 K75T60 DISCRETE IGBT by Infineon Technologies IGBT in TRENCHSTOP™ and Fieldstop technology with soft fast recovery anti-parallel Emitter Controlled HE diode Applications: Frequency Converters Uninterrupted Power Supply More Similar IGBT part number for General Semiconductor: PAR... もっと見る
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BSM50GD120DN2 BSM50GD120DN2BOSA1 IGBT力モジュールの電子部品
価格: Negotiated
MOQ: 10pieces
納期: 2-15days
ブランド: Infineon Technologies
ハイライト:BSM50GD120DN2 IGBT Power Module, BSM50GD120DN2BOSA1 IGBT Power Module
BSM50GD120DN2 BSM50GD120DN2BOSA1 IGBT Power Module Electronic components BSM 50 GD 120 DN2 Serise Description: • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate BSM50GD120DN2 BSM50GD120DN2BOSA1 IGBT Power Module Specification: Category ... もっと見る
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